247 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module features rohs applications ? high lev el of integrationonly one power semiconductor module required for the whole drive ? lo w saturation voltage and positive temperature coeffcient ? fast switc hing and short tail current ? free wheeling diodes with f ast and soft reverse recovery ? industry st andard package with insulated copper base plate and soldering pins for pcb mounting ? temperat ure sense included ? ac motor control ? motion/serv o control ? in verter and power supplies absolute maximum ratings (t j = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 75 a t c =80c 50 a i cm repetitive peak collector current t p =1ms 100 a p tot power dissipation per igbt 260 w diode v rrm repetitive reverse voltage t j =25c 1200 v i f(av) average forward current t c =25c 75 a t c =80c 50 a i frm repetitive peak forward current t p =1ms 100 a i 2 t t j =125c, t=10ms, v r =0v 680 a 2 s module characteristics (t j = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t j max) max. junction temperature 150 c t j op operating temperature -40 125 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index 250 m d mounting torque recommended (m5) 2.5 5 nm weight 300 g MG1250W-XBN2MM 1
248 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =2.0ma 5.0 5.8 6.5 v v ce(sat) collector - emitter i c =50a, v ge =15v, t j =25c 1. 7 v saturation voltage i c =50a, v ge =15v, t j =125c 1. 9 v i ices collector leakage current v ce =1200v, v ge =0v, t j =25c 1 ma v ce =1200v, v ge =0v, t j =125c 10 ma i ges gate leakage current v ce =0v, v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 4.0 q ge gate charge v ce =600v, i c =50a , v ge =15v 0.47 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 3.6 nf c res reverse transfer capacitance 0.16 nf t d(on) turn - on delay time v cc =600v i c =50a r g =18 v ge =15v inductive load t j =25c 90 ns t j =125c 90 ns t r rise time t j =25c 30 ns t j =125c 50 ns t d(off) turn - off delay time t j =25c 420 ns t j =125c 520 ns t f fall time t j =25c 70 ns t j =125c 90 ns e on turn - on energy t j =25c 4.9 mj t j =125c 6.6 mj e off turn - off energy t j =25c 4.0 mj t j =125c 4.9 mj i sc short circuit current t psc 10s , v ge =15v; t j =125c , v cc =900v 200 a r thjc junction-to-case thermal resistance (per igbt) 0.48 k/w diode v f forward voltage i f =50a, v ge =0v, t j =25c 1.65 v i f =50a, v ge =0v, t j =125c 1.65 v t rr reverse recovery time i f =50a, v r =600v di f /dt=1200a/s t j =125c 275 ns i rrm max. reverse recovery current 50 a e rec reverse recovery energy 4.4 mj r thjcd junction-to-case thermal resistance (per diode) 0.78 k/w electrical and thermal specifcations (t j = 25c, unless otherwise specifed) 2
249 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module diode-rectifer absolute maximum ratings (t j = 25c, unless otherwise specifed) symbol parameters test conditions values unit v rrm repetitive reverse voltage t j =25c 1600 v i f(av) average forward current t c =80c 50 a i frm non-repetitive surge forward current t j =45c, t=10ms, 50hz 350 a t j =45c, t=8.3ms, 60hz 385 i 2 t t j =45c, t=10ms, 50hz 612 a 2 s t j =45c, t=8.3ms, 60hz 74 1 diode-rectifer electrical and thermal specifcations (t j = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit v f forward voltage i f =50a, t j =25c 1. 1 v i f =50a, t j =125c 1.05 v i r reverse leakage current v r =1600v, t j =25c 50 a v r =1600v, t j =125c 1 ma r thjcd junction-to-case thermal resistance (per diode) 0.68 k/w brake-chopper absolute maximum ratings (t j = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 55 a t c =80c 40 a i cm repetitive peak collector current t p =1ms 80 a p tot power dissipation per igbt 195 w diode v rrm repetitive reverse voltage t j =25c 1200 v i f(av) average forward current t c =25c 25 a t c =80c 15 a i frm repetitive peak forward current t p =1ms 30 a i 2 t t j =125c, t=10ms, v r =0v 60 a 2 s 3
250 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =1.5ma 5.0 5.8 6.5 v v ce(sat) collector - emitter i c =40a, v ge =15v, t j =25c 1. 8 v saturation voltage i c =40a, v ge =15v, t j =125c 2.05 v i ices collector leakage current v ce =1200v, v ge =0v, t j =25c 0.25 a v ce =1200v, v ge =0v, t j =125c 2 ma i ges gate leakage current v ce =0v, v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 6 q ge gate charge v ce =600v, i c =40a , v ge =15v 0.33 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 2.5 nf c res reverse transfer capacitance 0.11 nf t d(on) turn - on delay time v cc =600v i c =40a r g =27 v ge =15v inductive load t j =25c 90 ns t j =125c 90 ns t r rise time t j =25c 30 ns t j =125c 50 ns t d(off) turn - off delay time t j =25c 420 ns t j =125c 520 ns t f fall time t j =25c 70 ns t j =125c 90 ns e on turn - on energy t j =25c 4.1 mj t j =125c 6.0 mj e off turn - off energy t j =25c 3.1 mj t j =125c 3.6 mj i sc short circuit current t psc 10s, v ge =15v; t j =125c, v cc =900v 160 a r thjc junction-to-case thermal resistance (per igbt) 0.62 k/w diode v f forward voltage i f =15a , v ge =0v, t j =25c 1.65 v i f =15a , v ge =0v, t j =125c 1.75 v t rr reverse recovery time i f =15a, v r =600v di f /dt=-400a/s t j =125c 150 ns i rrm max. reverse recovery current 15 a e rec reverse recovery energy 1. 15 mj r thjcd junction-to-case thermal resistance (per diode) 1.55 k/w brake-chopper electrical and thermal characteristics (t j = 25c, unless otherwise specifed) ntc characteristics (t j = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit r 25 resistance t c =25c 5 k b 25/50 3375 k 4
251 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module figure 1: typical output characteristics f or igbt inverter i c (a) v ce ?v? t j =125c t j =25c 100 80 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v ge =15v 3.5 60 figure 2: typical output characteristics f or igbt inverter v ge ?v? 0 20 i c (a) 40 100 t j =125c t j =25c v ce =20v 12 9 01 5 6 7 8 11 60 80 figure 3: typical transfer characteristics f or igbt inverter 8 12 4 6 2 0 01 0 20 30 40 e on e off ( mj ) e on e of f r g ? ? v ce =600 v i c =50 a v ge =15v t j =125c 10 figure 4: switching energy vs. gate resistor for igbt inverter 0 20 i c ?a? v ce =600v r g =18 v ge =15v t j =125c 100 60 40 e off e on 0 4 8 20 e on e off ( mj ) 12 80 16 figure 5: switching energy vs. collector current f or igbt inverter figure 6: reverse biased saf e operating area for igbt inverter 0 30 40 60 100 120 0 200 400 600 800 1000 1200 v ce ?v? 1400 r g = 18 v ge =15v t j =125c i c (a) 80 v ce ?v? 4.0 3.5 3.0 2.5 1.51.00.50 i c (a) t j =125c 2.04 .5 5.0 0 ge v =11v ge v = 9v ge v =13v ge v =15v ge v =17v ge v =19v 100 80 40 20 60 5
252 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module figure 7: diode forw ard characteristics for diode inverter v f ?v? 0.5 0 1.0 1.5 0.2 0 t j =25c t j =125c 2.5 i f ( a ) 20 40 100 60 80 e rec (mj) r g ? ? 0 10 20 30 40 6.0 4.0 2.0 0 8.0 i f =50 a v ce =600 v t j =125c figure 8: switching energy vs. gate resistort f or diode inverter e rec ( mj ) 4.0 2.0 0 20 i f (a) 60 40 0 6.0 8.0 r g =18 v ce =600v t j =125c 100 80 figure 9: switching energy vs. forward current f or diode inverter rectangular pulse duration (seconds) thjc ( k/w ) 0.00 10 .0 10 .1 1 10 0.01 0.1 1 diode igbt z figure 10: tr ansient thermal impedance of diode and igbt inverter figure 12: typical output char acteristics for igbt brake chopper i c (a) v ce ?v? t j =125c t j =25 c 80 60 40 20 0 0 0.5 1. 01 .5 2.0 2.5 3.0 v ge =15v 3.5 figure 11: diode forward characteristics for igbt inverter v f ?v? 0.2 0 0.4 0.6 1.2 0 i f ( a ) t j =25 c t j =125c 0.8 1.0 1.6 1.4 20 40 100 60 80 6
253 power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module figure 14: ntc charact eristics i f =25 a v ce =600 v t v j =125c r ( ? ) t c ?c ? t vj =125c t vj =25 c 100000 10000 1000 100 0 20 40 60 80 100 v ge =15v 140 120 160 r figure 13: diode forward characteristics for diode brake chopper v f ?v? 0.4 0 0.8 1.2 1.6 i f ( a ) t j =25c t j =125c 2.0 2.4 2. 8 30 20 15 10 5 0 25 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg1250 w-xbn2mm voltage rating current rating assembly site 12: 1200v 50: 50a w: package w xb: xb lo t number space reserved for qr code MG1250W-XBN2MM circuit diagram 7
254 power module ?2015littelfuse, inc specifcations are subject to change without notice. revised:12/04/14 MG1250W-XBN2MM power module 1200v 50a igbt module packing options part number marking weight packing mode m.o.q MG1250W-XBN2MM MG1250W-XBN2MM 300g bulk pack 20 dimensions-package w $ ? dimensions (mm) 8
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